optek technology inc. ? 1645 wallace drive, carrollton, texas 75006 phone: (972) 323-2200 or (800) 341-4747 fax: (972) 3 23-2396 sensors@optekinc .com www. optekinc.com issue b 03/2012 page 1 of 2 infrared light emitting diode opr2800, opr2800t optek reserves the right to make changes at any time in or der to improve design and to s upply the best product possible. description: the opr2800 is a gaaias infrared led mounted in a surface moun t chip carrier (smcc) pa ckage with a flat lens window that allows a wide beam angle. the smcc fo rmat has a lower height profile than the plcc-2 package and mounts in the same footprint. the device is suitabl e for use in single device or array applications. the opr2800 is spectrally matched to the opr5500 phototransistor. see application bulletin 237 for handling instructions. features: ? high-power gaaias ? matches plcc-2 footprint ? 875 nm wavelength ? wide beam angle ? wide operating temperature range ( -55 o c to +100 o c) pin # led 1 anode 2 cathode applications: ? non-contact position sensing ? datum detection ordering information part number led peak wavelength total beam angle packaging opr2800 875 nm 100 waffle pack opr2800t tape & reel 2 1 ? machine automation ? optical encoding anode indicator warning : front window is pressure sensitive. do not apply pressure or high vacuum to window.
infrared light emitting diode opr2800, opr2800t optek technology inc. ? 1645 wallace drive, carrollton, texas 75006 phone: (972) 323-2200 or (800) 341-4747 fax: (972) 3 23-2396 sensors@optekinc .com www. optekinc.com issue b 03/2012 page 2 of 2 optek reserves the right to make changes at any time in or der to improve design and to s upply the best product possible. electrical characteristics (t a = 25 c unless otherwise noted) symbol parameter min typ max units test conditions e e (apt) apertured radiant incidence 0.2 - - mw/cm 2 i f = 20 ma (3) v f forward voltage - - 1.50 v i f = 50 ma i r reverse current - - 100 a v r = 2.0 v p wavelength at peak emission 875 - nm i f = 10 ma hp emission angle at half power points - 100 - degree i f = 20 ma t r , t f output rise time, output fall time - - 500 ns i f(pk) = 100 ma, pw = 10 s, d.c. = 10.0% notes: 1. solder time less than 5 seconds at temperature extreme. 2. derate linearly at 1.30 mw/ c above 25 c. 3. e e(apt) is a measurement of the apertured radiant incidence upon a sens ing area 0.081? (2.06 mm) in diameter, perpendicular to and centered on the mechanical axis of the lens and 0.590? (14.99 mm) from the measurement surface. ee (apt) is not necessarily uniform within the measured area. absolute maximum ratings (t a = 25 c unless otherwise noted) storage and operating te mperature range -55 o c to +125 o c reverse voltage 30 v continuous forward current 50 ma solder reflow time within 5c of peak temperature is 20 to 40 seconds (1) 250 c power dissipation 130 mw (2) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 102030405060708090100 forward current i f (ma) normalized optical power -60 c -40 c -20 c 0 c 20 c 40 c 60 c 80 c 100 c 120 c normalized at 50 ma and 20 c optical power vs i f vs temperature 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 0 102030405060708090100 forward current (ma) typical forward voltage (v) -60 c -40 c -20 c 0 c 20 c 40 c 60 c 80 c 100 c 120c forward voltage vs forward current vs temperature opr2800
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